st173s series inverter grade thyristors stud version 175a 1 bulletin i25181 rev. c 12/96 www.irf.com features all diffused design center amplifying gate guaranteed high dv/dt guaranteed high di/dt high surge current capability low thermal impedance high speed performance typical applications inverters choppers induction heating all types of force-commutated converters i t(av) 175 a @ t c 85 c i t(rms) 275 a i tsm @ 50hz 4680 a @ 60hz 4900 a i 2 t@ 50hz 110 ka 2 s @ 60hz 100 ka 2 s v drm /v rrm 1000 to 1200 v t q range 15 to 25 s t j - 40 to 125 c parameters st173s units major ratings and characteristics case style to-209ab (to-93)
st173s series 2 bulletin i25181 rev. c 12/96 www.irf.com voltage v drm /v rrm , maximum v rsm , maximum i drm /i rrm max. type number code repetitive peak voltage non-repetitive peak voltage @ t j = t j max. vvma 10 1000 1100 12 1200 1300 electrical specifications voltage ratings frequency units 50hz 500 320 790 550 4510 3310 400hz 450 290 810 540 1970 1350 1000hz 330 190 760 490 1050 680 a 2500hz 170 80 510 300 480 280 recovery voltage vr 50 50 50 50 50 50 voltage before turn-on vd v drm v drm v drm rise of on-state current di/dt 50 50 - - - - a/ m s case temperature 60 85 60 85 60 85 c equivalent values for rc circuit 47 w / 0.22f 47 w / 0.22f 47 w / 0.22f i tm 180 o el 180 o el 100 m s i tm i tm current carrying capability v i t(av) max. average on-state current 175 a 180 conduction, half sine wave @ case temperature 85 c i t(rms) max. rms on-state current 275 dc @ 75c case temperature i tsm max. peak, one half cycle, 4680 t = 10ms no voltage non-repetitive surge current 4900 a t = 8.3ms reapplied 3940 t = 10ms 100% v rrm 4120 t = 8.3ms reapplied sinusoidal half wave, i 2 t maximum i 2 t for fusing 110 t = 10ms no voltage initial t j = t j max 100 t = 8.3ms reapplied 77 t = 10ms 100% v rrm 71 t = 8.3ms reapplied i 2 ? t maximum i 2 ? t for fusing 1100 ka 2 ? s t = 0.1 to 10ms, no voltage reapplied parameter st173s units conditions on-state conduction ka 2 s st173s 40
st173s series 3 bulletin i25181 rev. c 12/96 www.irf.com v tm max. peak on-state voltage 2.07 i tm = 600a, t j = t j max, t p = 10ms sine wave pulse v t(to)1 low level value of threshold voltage v t(to)2 high level value of threshold voltage r t 1 low level value of forward slope resistance r t 2 high level value of forward slope resistance i h maximum holding current 600 t j = 25c, i t > 30a i l typical latching current 1000 t j = 25c, v a = 12v, ra = 6 w, i g = 1a parameter st173s units conditions on-state conduction 1.55 (16.7% x p x i t(av) < i < p x i t(av) ), t j = t j max. 1.58 (i > p x i t(av) ), t j = t j max. v 0.87 (16.7% x p x i t(av) < i < p x i t(av) ), t j = t j max. 0.82 (i > p x i t(av) ), t j = t j max. m w ma di/dt max. non-repetitive rate of rise t j = t j max, v drm = rated v drm of turned-on current i tm = 2 x di/dt t j = 25c, v dm = rated v drm , i tm = 50a dc, t p = 1s resistive load, gate pulse: 10v, 5 w source t j = t j max, i tm = 300a, commutating di/dt = 20a/s v r = 50v, t p = 500s, dv/dt: see table in device code switching parameter st173s units conditions 1000 a/s t d typical delay time 1.1 min max dv/dt maximum critical rate of rise of t j = t j max., linear to 80% v drm , higher value off-state voltage available on request i rrm max. peak reverse and off-state i drm leakage current parameter st173s units conditions blocking 500 v/ m s 40 ma t j = t j max, rated v drm /v rrm applied p gm maximum peak gate power 60 p g(av) maximum average gate power 10 i gm max. peak positive gate current 10 a t j = t j max, t p 5ms +v gm maximum peak positive gate voltage -v gm maximum peak negative gate voltage i gt max. dc gate current required to trigger v gt max. dc gate voltage required to trigger i gd max. dc gate current not to trigger 20 ma v gd max. dc gate voltage not to trigger 0.25 v triggering parameter st173s units conditions 20 5 vt j = t j max, t p 5ms 200 ma 3v t j = 25c, v a = 12v, ra = 6 w t j = t j max., rated v drm applied t q max. turn-off time 15 25 s wt j = t j max, f = 50hz, d% = 50
st173s series 4 bulletin i25181 rev. c 12/96 www.irf.com ordering information table t j max. junction operating temperature range -40 to 125 t stg max. storage temperature range -40 to 150 r thjc max. thermal resistance, junction to case 0.105 dc operation r thcs max. thermal resistance, case to heatsink 0.04 mounting surface, smooth, flat and greased t mounting torque, 10% 31 nm (275) (ibf-in) 24.5 nm (210) (ibf-in) wt approximate weight 280 g case style to-209ab (to-93) see outline table parameter st173s units conditions thermal and mechanical specifications c k/w non lubricated threads 5 68 9 ST173S12PFK0 4 10 7 device code 3 lubricated threads 12 1 - thyristor 2 - essential part number 3 - 3 = fast turn off 4 - s = compression bonding stud 5 - voltage code: code x 100 = v rrm (see voltage ratings table) 6 - p = stud base 3/4" 16unf-2a m = stud base metric threads m16 x 1.5 7 - reapplied dv/dt code (for t q test condition) 8 -t q code 9 - 0 = eyelet terminals (gate and aux. cathode leads) 1 = fast-on terminals (gate and aux. cathode leads) 2 = flag terminals (for cathode and gate terminals) - critical dv/dt: none = 500v/sec (standard value) l = 1000v/sec (special selection) 180 0.016 0.012 120 0.019 0.020 90 0.025 0.027 k/w t j = t j max. 60 0.036 0.037 30 0.060 0.060 conduction angle sinusoidal conduction rectangular conduction units conditions d r thjc conduction (the following table shows the increment of thermal resistence r thjc when devices operate at different conduction angles than dc) dv/dt - t q combinations available dv/dt (v/s) 20 50 100 200 400 15 cl -- -- -- -- 18 cp dp ep fp * -- 20 ck dk ek fk * hk 25 cj dj ej fj hj 30 -- dh eh fh hh t q (s) * standard part number. all other types available only on request. 10
st173s series 5 bulletin i25181 rev. c 12/96 www.irf.com case style to-209ab (to-93) all dimensions in millimeters (inches) fast-on terminals outline table case style to-209ab (to-93) flag all dimensions in millimeters (inches) ceramic housing 27 .5 (1 .08) ma x. 38.5 (1.52) max. 3 (0.12) 80 ( 3.15) ma x. dia. 27.5 (1.08) max. 16 (0 .63) ma x. flag terminals 1.5 (0.06) dia. sw 32 22 (0.89) dia. 6.5 (0.25) 13 (0.5 1) 14 (0.55) *for metric device. m16 x 1.5 - lenght 21 (0.83) max. 3/4"-16unf-2a* amp. 280000-1 ref-250 2 white shrink red shrink red cathode red silicon rubber +i 210 (8.26) 10 (0.39) c.s. 0.4mm (0.0006 s.i.) 38.5 (1.52) max. + - 220 (8.66) 10 (0.39) ceramic housing 90 (3.54) min. 4.3 (0.17) dia. 19 (0.75) max. 8.5 (0.33) dia. * for metric device : m16 x 1.5 - lenght 21 (0.83) max. c.s. 25mm 2 (0.039 s.i.) flexible lead 4 (0.16) max. 2 2 ( 0 . 8 6 ) mi n . ma x. 35 (1.38) max. 3/4"-16unf-2a * 27.5 (1.08) sw 32 27.5 (1.08) max. dia. white gate 9 . 5 ( 0 . 3 7 ) mi n . 16 (0.63) max.
st173s series 6 bulletin i25181 rev. c 12/96 www.irf.com fig. 3 - on-state power loss characteristics fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics fig. 4 - on-state power loss characteristics 80 90 100 110 120 130 0 20 40 60 80 100 120 140 160 180 maximum allowable case temperature ( c) 30 60 90 120 180 average on-state current (a) conduction angle st173s ser ies r (dc) = 0.105 k/w thjc 70 80 90 100 110 120 130 0 40 80 120 160 200 240 280 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature ( c) conduction period st173s series r (dc) = 0.105 k/w thjc 25 50 75 100 125 maximum allowable ambient temperature ( c) r = 0 . 0 8 k / w - d e l t a r t h s a 0 . 1 k / w 0 .16 k / w 0 . 2 k / w 0 . 3 k / w 0 . 4 k / w 0 . 5 k / w 0 . 8 k / w 1 . 2 k /w 0 50 100 150 200 250 300 350 0 20 40 60 80 100 120 140 160 180 180 120 90 60 30 rms limit conduction angle maximum average on-state power los s (w) average on-state current (a) st173s series t = 125c j 25 50 75 100 125 maximum allowable ambient temperature ( c) r = 0 . 0 8 k / w - d e l t a r t h s a 0 . 1 k / w 0 . 1 6 k / w 0 . 2 k / w 0 . 3 k / w 0 . 4 k / w 0 . 5 k / w 0 . 8 k / w 1 . 2 k / w 0 50 100 150 200 250 300 350 400 450 500 0 40 80 120 160 200 240 280 dc 180 120 90 60 30 rms limit con ducti on period maximum average on-state power loss (w) average on-state current (a) st173s series t = 125c j
st173s series 7 bulletin i25181 rev. c 12/96 www.irf.com fig. 7 - on-state voltage drop characteristics fig. 8 - thermal impedance z thjc characteristic fig. 10 - reverse recovery current characteristics fig. 9 - reverse recovered charge characteristics 100 1000 10000 11.522.533.544.5 t = 25 c j instantaneous on-state current (a) instantaneous on-state voltage (v) t = 125c j st173s seri es 0 20 40 60 80 100 120 140 160 0 20406080100 rate of fall of on-state current - di/dt (a/ s) i = 500 a 300 a 200 a 100 a 50 a st 173s series t = 125 c j maximum reverse recovery current - irr (a) tm 0 50 100 150 200 250 0 20406080100 rate of fall of on-state current - di/dt (a/ s) i = 500 a 300 a 200 a 100 a 50 a st173s series t = 125 c j maximum reverse recovery charge - qrr ( c) tm fig. 6 - maximum non-repetitive surge current fig. 5 - maximum non-repetitive surge current 2000 2500 3000 3500 4000 4500 1 10 100 numb er of eq ual amplitude h alf cycle current p ulses (n) peak half sine wave on-state current (a) initia l t = 125 c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j st 173s series at any rated load condition and with rated v applied follow in g surge. rrm 1500 2000 2500 3000 3500 4000 4500 5000 0.01 0.1 1 pulse train duration (s) versus pulse train duration. control of conduction may not be maintained. peak half sine wave on-state current (a) in itial t = 125 c no voltage reapplied rated v reapplied rrm j st173s series maximum non repetitive surge current 0.001 0. 01 0.1 1 0.001 0.01 0.1 1 10 square wave pulse duration (s) th jc transient thermal impedance z (k/w) steady state value r = 0.105 k/w (dc operation) thj c st173s ser ies
st173s series 8 bulletin i25181 rev. c 12/96 www.irf.com fig. 13 - frequency characteristics fig. 11 - frequency characteristics fig. 12 - frequency characteristics 1e2 1e3 1e4 1e1 1e2 1e3 1e4 50 hz 400 2500 100 pulse basewidth ( s) peak on-state current (a) 1000 1500 2000 3000 200 500 st173s seri es sinusoidal pulse t = 60 c c snubber circuit r = 47 ohm s c = 0. 22 f v = 80% v s s d drm 1e4 tp 1e1 1e2 1e3 1e4 50 hz 400 2500 100 pulse basewidth ( s) 1000 1500 2000 3000 200 500 st173s series sinusoidal pulse t = 85 c c snubber circuit r = 47 ohms c = 0.22 f v = 80% v s s d drm tp 1e1 1e1 1e2 1e3 1e4 1e11e21e31e4 50 hz 400 100 1000 1500 200 pulse basewidth ( s) peak on-state current (a) 5000 2500 st173s series trap ezoid al pulse t = 60 c di/dt = 50a/s c snubber circuit r = 47 ohms c = 0.22 f v = 80% v s s d drm 1e4 500 2000 3000 1e1 1e2 1e3 1e4 1e11e21e31e4 50 hz 400 2500 100 1000 1500 200 pulse basewidth ( s) peak on-sta te current (a) 5000 st173s seri es trapezoidal pulse t = 60 c di/dt = 100a/s c snubber circuit r = 47 ohms c = 0.22 f v = 80% v s s d drm tp 1e4 10000 2000 500 1e1 1e2 1e3 1e4 50 hz 400 2500 100 1000 1500 200 pulse basewidt h ( s) 5000 st173s series trapezoidal pulse t = 85 c di/dt = 50a/s c snubber circuit r = 47 ohms c = 0.22 f v = 80% v s s d drm tp 1e1 500 2000 3000 1e1 1e2 1e3 1e4 50 hz 400 2500 100 1000 1500 200 pulse basewidt h ( s) 5000 snubber circuit r = 47 ohms c = 0.22 f v = 80% v s s d drm st1 7 3s se r ie s trap ezoida l pu lse t = 85c di/d t = 100a/s c tp 10000 1e1 500 2000
st173s series 9 bulletin i25181 rev. c 12/96 www.irf.com fig. 14 - maximum on-state energy power loss characteristics 0.1 1 10 100 0.001 0.01 0.1 1 10 100 vgd ig d (b) (a) tj=25 c tj=125 c tj= -40 c (1) (2) instantaneous gate current (a) instantaneous gate voltage (v) rectangular gate pulse a) recommended load lin e for b) recommended load line for <=30% r ated di/dt : 10v, 10ohms rated di/dt : 20v, 10ohms; tr <=1 s tr<=1 s (1) pgm = 10w, tp = 20ms (2) pgm = 20w, tp = 10ms (3) pgm = 40w, tp = 5ms (4) pgm = 60w, tp = 3.3ms (3) device: st173s series (4) fr equency limited by pg(av) fig. 15 - gate characteristics 1e1 1e2 1e3 1e4 1e5 1e1 1e2 1e3 1e4 pulse basewidth ( s) 20 jo ules per pulse 2 1 0.5 0.2 0.1 peak on-state current (a) st173s series sinusoidal pu lse 7.5 4 0.3 tp 1e4 1e1 1e2 1e3 1e4 pulse basewidth ( s) 20 jou les p er pulse 2 1 0.5 0.2 0. 1 10 5 st173s series recta ngula r pulse di/dt = 50a/ s tp 1e1 3 0.3 0. 4
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